激光辅助芯片键合

作者: Hermann Moos

摘要: Finetech激光辅助键合技术用于对速度、精度和局部甚至非常小区域的精确加热控制有高度需求的场合,例如芯片到热沉(C2S)、芯片到晶圆(C2W)键合。尤其是快速温度循环可减少表面氧化的风险,并缩短时间优先的生产环境中的工艺周期。在有序的基板级或晶圆级键合工艺中,每颗芯片只能被加热一次。与区域加热相反,激光局部加热不需要额外的措施避免热膨胀。芯片可以在仅500微米间距情况下键合,相邻的焊点不会出现(重新)融化的现象。

根据应用和材料的不同,支持两种技术。如果芯片/热沉对光的波长是透明的(例如石英玻璃,蓝宝石等),激光的能量直接穿过它们且没有显著的吸收效果,直接对焊料进行加热。对于非透明的基板材料(硅、 Ply-Si, 砷化镓等),激光的能量会被吸收并转化为键合过程中的局部热源。

 

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Finetech USA/East Coast
+1 603 627 8989
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